IXYS DE375-501N21A

包装/外壳

6-SMD, Flat Lead Exposed Pad

供应商器件包装

DE375

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5.5

Maximum Continuous Drain Current (A)

25

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

350@15V

Typical Gate Charge @ Vgs (nC)

70@10V

Typical Input Capacitance @ Vds (pF)

2500@400V

Typical Reverse Transfer Capacitance @ Vds (pF)

46@400V

Typical Output Capacitance @ Vds (pF)

170@400V

Maximum Power Dissipation (mW)

4500

Typical Turn-Off Delay Time (ns)

5

Typical Turn-On Delay Time (ns)

5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Automotive

无

Military

无

Mounting

表面贴装

Package Height

3.18

Package Length

19.56

Package Width

18.15

PCB changed

6

Package

Tube

Base Product Number

DE475

厂商

IXYS-RF

Product Status

Obsolete

Voltage Rated

500 V

Package Description

,

Rohs Code

有

Manufacturer Part Number

DE375-501N21A

Manufacturer

IXYS Corporation

Part Life Cycle Code

Obsolete

Ihs Manufacturer

IXYS CORP

Risk Rank

5.79

系列

DE

无铅代码

有

零件状态

NRND

类型

MOSFET

额定电流

25A

Reach合规守则

compliant

频率

50MHz

引脚数量

6

配置

单四源

晶体管类型

N-Channel

增益

-

信道型

N

功率 - 输出

940W

噪声图

-

RoHS状态

符合RoHS标准