IXYS DE475-102N21A

包装/外壳

6-SMD, Flat Lead Exposed Pad

供应商器件包装

DE475

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

24

Maximum Drain Source Resistance (mOhm)

450@15V

Typical Gate Charge @ Vgs (nC)

155@10V

Typical Input Capacitance @ Vds (pF)

5500@800V

Typical Reverse Transfer Capacitance @ Vds (pF)

52@800V

Typical Output Capacitance @ Vds (pF)

190@800V

Maximum Power Dissipation (mW)

1800000

Typical Turn-Off Delay Time (ns)

5

Typical Turn-On Delay Time (ns)

5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Military

无

Mounting

表面贴装

Package Height

3.18

Package Length

21.08

Package Width

23.24

PCB changed

6

Package

Tube

Base Product Number

DE475

厂商

IXYS-RF

Product Status

Obsolete

Voltage Rated

1000 V

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

DE475-102N21A

Manufacturer

IXYS Corporation

Part Life Cycle Code

Transferred

Ihs Manufacturer

IXYS CORP

Risk Rank

5.7

系列

DE

无铅代码

有

零件状态

Acquired

ECCN 代码

EAR99

类型

MOSFET

子类别

FET 通用电源

额定电流

24A

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

频率

-

引脚数量

6

资历状况

不合格

配置

单四源

晶体管类型

N-Channel

增益

-

信道型

N

功率 - 输出

1800W

噪声图

-

最高频段

甚高频段

RoHS状态

符合RoHS标准