IXYS Integrated Circuits Division / Littelfuse IXFM40N30

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

40

Maximum Drain Source Resistance (MOhm)

88@10V

Typical Gate Charge @ Vgs (nC)

177@10V

Typical Gate Charge @ 10V (nC)

177

Typical Input Capacitance @ Vds (pF)

4800@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

45

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

75

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

11.4(Max)

Package Width

26.66(Max)

Package Length

39.12(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-204AE

Manufacturer Part Number

IXFM40N30

Manufacturer

IXYS

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

IXYS CORP

Risk Rank

5.83

Part Package Code

TO-3

Drain Current-Max (ID)

40 A

无铅代码

有

零件状态

Obsolete

附加功能

雪崩 额定

子类别

FET 通用电源

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

O-MBFM-P2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-204

最大漏极电流 (Abs) (ID)

40 A

漏极-源极导通最大电阻

0.088 Ω

脉冲漏极电流-最大值(IDM)

160 A

DS 击穿电压-最小值

300 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

300 W

环境耗散-最大值

300 W