IXYS Integrated Circuits Division / Littelfuse IXFT60N65X2HVTRL

EU RoHS

Compliant

ECCN (US)

EAR99

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

60

Maximum Drain Source Resistance (MOhm)

52@10V

Typical Gate Charge @ Vgs (nC)

108@10V

Typical Gate Charge @ 10V (nC)

108

Typical Input Capacitance @ Vds (pF)

6300@25V

Maximum Power Dissipation (mW)

780000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

23

Typical Turn-Off Delay Time (ns)

63

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

Acquired

配置

Single

信道型

N