IXYS Integrated Circuits Division / Littelfuse IXFM6N100

表面安装

NO

材料

Si

终端数量

2

晶体管元件材料

SILICON

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Package Height

9.14(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

35

Typical Turn-Off Delay Time (ns)

100

Typical Rise Time (ns)

40

Typical Fall Time (ns)

60

Maximum Power Dissipation (mW)

180000

Typical Input Capacitance @ Vds (pF)

2600@25V

Typical Gate Charge @ 10V (nC)

88

Typical Gate Charge @ Vgs (nC)

88@10V

Maximum Drain Source Resistance (MOhm)

2000@10V

Maximum Continuous Drain Current (A)

6

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

1000

Number of Elements per Chip

1

Channel Mode

Enhancement

Package Width

25.9(Max)

Package Length

39.12(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-204AA

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

IXFM6N100

Package Shape

ROUND

Manufacturer

IXYS Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

IXYS CORP

Risk Rank

5.82

Part Package Code

TO-3

Drain Current-Max (ID)

6 A

无铅代码

有

零件状态

Obsolete

附加功能

雪崩 额定

子类别

FET 通用电源

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

O-MBFM-P2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-204

最大漏极电流 (Abs) (ID)

6 A

漏极-源极导通最大电阻

2 Ω

脉冲漏极电流-最大值(IDM)

24 A

DS 击穿电压-最小值

1000 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

180 W

环境耗散-最大值

180 W