MagnaChip MDP1723TH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

191

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

2.3@10V

Typical Gate Charge @ Vgs (nC)

88.3@10V

Typical Gate Charge @ 10V (nC)

88.3

Typical Input Capacitance @ Vds (pF)

5755@20V

Maximum Power Dissipation (mW)

138900

Typical Fall Time (ns)

42.7

Typical Rise Time (ns)

14.7

Typical Turn-Off Delay Time (ns)

84.8

Typical Turn-On Delay Time (ns)

24.3

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65(Max)

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

包装

Tube

引脚数量

3

配置

Single

信道型

N