MagnaChip MML60R190PTH

底架

通孔

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

超级交界处

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

20

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

190@10V

Typical Gate Charge @ Vgs (nC)

51@10V

Typical Gate Charge @ 10V (nC)

51

Typical Input Capacitance @ Vds (pF)

1630@25V

Maximum Power Dissipation (mW)

154000

Typical Fall Time (ns)

47

Typical Rise Time (ns)

73

Typical Turn-Off Delay Time (ns)

146

Typical Turn-On Delay Time (ns)

32

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65(Max)

Package Width

4.83(Max)

Package Length

10.29(Max)

PCB changed

3

Tab

Tab

Standard Package Name

I2PAK

Supplier Package

TO-262

Lead Shape

通孔

RoHS

Non-Compliant

Turn Off Delay Time

146 ns

包装

Tube

零件状态

Unconfirmed

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

154 W

引脚数量

3

配置

Single

元素配置

Single

接通延迟时间

32 ns

连续放电电流(ID)

20 A

栅极至源极电压(Vgs)

30 V

输入电容

1.63 nF

信道型

N

漏源电阻

190 mΩ

宽度

4.63 mm

高度

11.05 mm

长度

10.29 mm