MagnaChip MMIS70R1K4PTH

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

超级交界处

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

700

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

3.2

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

1400@10V

Typical Gate Charge @ Vgs (nC)

11@10V

Typical Gate Charge @ 10V (nC)

11

Typical Input Capacitance @ Vds (pF)

312@25V

Maximum Power Dissipation (mW)

33000

Typical Fall Time (ns)

21

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

33

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

6.22(Max)

Package Width

2.39(Max)

Package Length

6.73(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-251

Supplier Package

IPAK

Lead Shape

通孔

包装

Tube

零件状态

活跃

引脚数量

3

配置

Single

信道型

N