MagnaChip MDP1901TH

底架

通孔

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

36

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

22@10V

Typical Gate Charge @ Vgs (nC)

75@10V

Typical Gate Charge @ 10V (nC)

75

Typical Input Capacitance @ Vds (pF)

3045@30V

Maximum Power Dissipation (mW)

34000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65(Max)

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Number of Elements

1

RoHS

Compliant

包装

Tube

零件状态

活跃

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

3

配置

Single

功率耗散

34 W

连续放电电流(ID)

36 A

栅极至源极电压(Vgs)

20 V

信道型

N

辐射硬化

无