Microchip Technology 0912GN-250V
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0912GN-250V
1610-0912GN-250V
晶体管 - FET,MOSFET - 射频
2-Flatpack, Fin Leads, Flanged
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RF MOSFET Transistors TRAN, GaN, 960-1215 MHz, 250W, 50V
1最小包装量--
0912GN-250V详情
Microchip Technology 0912GN-250V重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
2-Flatpack, Fin Leads, Flanged
供应商器件包装
-
RoHS
Details
Id - Continuous Drain Current
12 mA
Vds - Drain-Source Breakdown Voltage
65 V
Mounting Styles
螺钉安装
Pd - Power Dissipation
700 W
Factory Pack QuantityFactory Pack Quantity
5
Vgs - Gate-Source Voltage
- 8 V to - 2 V
Package
Bulk
厂商
微芯片技术
Product Status
活跃
Voltage Rated
65 V
系列
V
类型
射频功率MOSFET
额定电流
-
频率
960MHz ~ 1.215GHz
工作频率
960 MHz to 1.215 GHz
输出功率
250 W
测试电流
60 mA
晶体管类型
HEMT
增益
18.5 dB
功率 - 输出
250W
噪声图
-
电压-测试
50 V
0912GN-250V拓展信息
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