Microchip Technology VRF3933

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

RoHS

Details

Transistor Polarity

N-Channel

Id - Continuous Drain Current

20 A

Vds - Drain-Source Breakdown Voltage

260 V

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

Forward Transconductance - Min

8 mS

Pd - Power Dissipation

648 W

Factory Pack QuantityFactory Pack Quantity

1

Vgs - Gate-Source Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Unit Weight

1.292085 oz

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

VRF3933

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

不推荐

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

8.44

Drain Current-Max (ID)

20 A

类型

射频功率MOSFET

端子位置

RADIAL

终端形式

FLAT

Reach合规守则

compliant

JESD-30代码

O-CRFM-F4

工作频率

30 MHz

配置

SINGLE

操作模式

增强型MOSFET

箱体转运

SOURCE

输出功率

350 W

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

工作温度范围

- 65 C to + 150 C

增益

28 dB

最大漏极电流 (Abs) (ID)

20 A

DS 击穿电压-最小值

250 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

甚高频段

功率增益-最小值(Gp)

23 dB