Microsemi Corporation APT35G60BN
- 收藏
- 对比
APT35G60BN
1604-APT35G60BN
晶体管 - IGBT - 单个
--
大陆
立即发货

Description: TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,35A I(C),TO-247
1最小包装量--
APT35G60BN详情
Microsemi Corporation APT35G60BN重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
,
Operating Temperature-Max
150 °C
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
Reach合规守则
unknown
极性/通道类型
N-CHANNEL
最大耗散功率(Abs)
162 W
集电极电流-最大值(IC)
35 A
集电极-发射器电压-最大值
600 V
栅极-发射极电压-最大值
20 V
栅极-发射极Thr电压-最大值
5 V
APT35G60BN拓展信息
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation







哦! 它是空的。