Microsemi Corporation APT50GF60BR
- 收藏
- 对比
APT50GF60BR
1604-APT50GF60BR
晶体管 - IGBT - 单个
--
大陆
立即发货

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
1最小包装量--
APT50GF60BR详情
Microsemi Corporation APT50GF60BR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
TO-247
Package Description
,
Operating Temperature-Max
150 °C
Rise Time-Max (tr)
100 ns
ECCN 代码
EAR99
Reach合规守则
compliant
引脚数量
3
极性/通道类型
N-CHANNEL
最大耗散功率(Abs)
300 W
集电极电流-最大值(IC)
80 A
集电极-发射器电压-最大值
600 V
栅极-发射极电压-最大值
20 V
栅极-发射极Thr电压-最大值
6.5 V
最大下降时间 (tf)
110 ns
APT50GF60BR拓展信息
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation








哦! 它是空的。