Nexperia USA Inc. PDTA124EQB-QZ

包装/外壳

3-XDFN Exposed Pad

安装类型

Surface Mount, Wettable Flank

供应商器件包装

DFN1110D-3

Current-Collector (Ic) (Max)

100 mA

Product Status

活跃

厂商

Nexperia USA Inc.

Number of Elements per Chip

3

Package Type

DFN1110D-3

Maximum Collector Emitter Voltage

-50 V

Maximum DC Collector Current

100 mA

MSL

-

Qualification

AEC-Q101

Transistor Polarity

Single PNP

Emitter- Base Voltage VEBO

- 10 V

Typical Resistor Ratio

1

Pd - Power Dissipation

420 mW

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

60 at - 5 mA, - 5 V

Typical Input Resistor

22 kOhms

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

934663472147

Manufacturer

Nexperia

Brand

Nexperia

RoHS

Details

Collector- Emitter Voltage VCEO Max

- 50 V

系列

Automotive, AEC-Q101

包装

MouseReel

子类别

Transistors

配置

Single

功率耗散

340mW

功率 - 最大

340 mW

产品类别

BJTs - Bipolar Transistors - Pre-Biased

晶体管类型

PNP - Pre-Biased

最小直流增益（hFE）@ Ic, Vce

60 @ 5mA, 5V

最大集极截止电流

100nA

不同 Ib, Ic 时 Vce 饱和度（最大值）

100mV @ 500μA, 10mA

电压 - 集射极击穿（最大值）

50 V

频率转换

180 MHz

电阻基(R1)

22 kOhms

连续集电极电流

100mA

电阻-发射极基极(R2)

22 kOhms

产品类别

Bipolar Transistors - Pre-Biased