Nexperia USA Inc. PDTC143EQB-QZ
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PDTC143EQB-QZ
1729-PDTC143EQB-QZ
晶体管 - 双极(BJT)- 单,预偏置
3-XDFN Exposed Pad
大陆
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PDTC143EQB-Q/SOT8015/DFN1110D-
1最小包装量--
PDTC143EQB-QZ详情
Nexperia USA Inc. PDTC143EQB-QZ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
3-XDFN Exposed Pad
供应商器件包装
DFN1110D-3
厂商
Nexperia USA Inc.
Product Status
活跃
Current-Collector (Ic) (Max)
100 mA
Number of Elements per Chip
3
Package Type
DFN1110D-3
Maximum Collector Emitter Voltage
50 V
Maximum DC Collector Current
100 mA
MSL
-
Qualification
AEC-Q101
Transistor Polarity
Single NPN
Emitter- Base Voltage VEBO
10 V
Typical Resistor Ratio
1
Pd - Power Dissipation
420 mW
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
30 at 10 mA, 5 V
Typical Input Resistor
4.7 kOhms
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
5000
Mounting Styles
SMD/SMT
Part # Aliases
934663479147
Manufacturer
Nexperia
Brand
Nexperia
RoHS
Details
Collector- Emitter Voltage VCEO Max
50 V
系列
Automotive, AEC-Q101
包装
MouseReel
子类别
Transistors
配置
Single
功率耗散
340mW
产品类别
BJTs - Bipolar Transistors - Pre-Biased
晶体管类型
NPN - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
30 @ 10mA, 5V
最大集极截止电流
1μA
不同 Ib, Ic 时 Vce 饱和度(最大值)
150mV @ 500μA, 10mA
电压 - 集射极击穿(最大值)
50 V
频率转换
230 MHz
电阻基(R1)
4.7 kOhms
连续集电极电流
100mA
电阻-发射极基极(R2)
4.7 kOhms
产品类别
Bipolar Transistors - Pre-Biased
PDTC143EQB-QZ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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