参数名
参数值
参数名
参数值
安装类型
Surface Mount, Wettable Flank
包装/外壳
3-XDFN Exposed Pad
供应商器件包装
DFN1110D-3
厂商
Nexperia USA Inc.
Product Status
活跃
Current-Collector (Ic) (Max)
100 mA
Number of Elements per Chip
3
Package Type
DFN1110D-3
Maximum Collector Emitter Voltage
50 V
Maximum DC Collector Current
100 mA
MSL
-
Qualification
AEC-Q101
Transistor Polarity
Single NPN
Emitter- Base Voltage VEBO
10 V
Typical Resistor Ratio
1
Pd - Power Dissipation
420 mW
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
30 at 10 mA, 5 V
Typical Input Resistor
4.7 kOhms
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
5000
Mounting Styles
SMD/SMT
Part # Aliases
934663479147
Manufacturer
Nexperia
Brand
Nexperia
RoHS
Details
Collector- Emitter Voltage VCEO Max
50 V
系列
Automotive, AEC-Q101
包装
MouseReel
子类别
Transistors
配置
Single
功率耗散
340mW
产品类别
BJTs - Bipolar Transistors - Pre-Biased
晶体管类型
NPN - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
30 @ 10mA, 5V
最大集极截止电流
1μA
不同 Ib, Ic 时 Vce 饱和度(最大值)
150mV @ 500μA, 10mA
电压 - 集射极击穿(最大值)
50 V
频率转换
230 MHz
电阻基(R1)
4.7 kOhms
连续集电极电流
100mA
电阻-发射极基极(R2)
4.7 kOhms
产品类别
Bipolar Transistors - Pre-Biased