NXP Semiconductors PDTB123EU

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

外壳材料

1

Type of capacitor

ceramic

Kind of capacitor

MLCC

Mounting

SMD

Case - inch

1812

Case - mm

4532

Capacitors series

KGF

Gross weight

0.1 g

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

小概要

Transition Frequency-Nom (fT)

140 MHz

Operating temperature

-55...125°C

容差

±10%

ECCN 代码

EAR99

附加功能

BUILT IN BIAS RESISTANCE RATIO IS 1

电容量

4.7nF

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

unknown

参考标准

AEC-Q101; IEC-60134

JESD-30代码

R-PDSO-G3

电介质

C0G (NP0)

配置

SINGLE WITH BUILT-IN RESISTOR

晶体管应用

SWITCHING

极性/通道类型

PNP

集电极电流-最大值(IC)

0.5 A

最小直流增益（hFE）

40

集电极-发射器电压-最大值

50 V

Operating voltage

630V