NXH300B100H4Q2F2PG详情
onsemi NXH300B100H4Q2F2PG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
Module
供应商器件包装
27-PIM (71x37.4)
厂商
onsemi
Package
Tray
Product Status
活跃
Current-Collector (Ic) (Max)
73 A
Maximum Gate Emitter Voltage
±20V
Package Type
93x47 (PRESSFIT) (Pb-Free and Halide-Free Press Fit Pins), Q2BOOST - PIM53
Maximum Collector Emitter Voltage
1000 V
Collector-Emitter Saturation Voltage
1.8V
Pd - Power Dissipation
194 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
12
Continuous Collector Current at 25 C
73 A
Manufacturer
onsemi
Brand
onsemi
RoHS
Details
Collector- Emitter Voltage VCEO Max
1000 V
系列
-
操作温度
-40°C ~ 175°C (TJ)
包装
Tray
子类别
IGBTs
配置
Dual, Common Source
功率耗散
194W
功率 - 最大
194 W
输入
Standard
产品类别
IGBT模块
最大集极截止电流
800 μA
电压 - 集射极击穿(最大值)
1118 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.25V @ 15V, 100A
连续集电极电流
73A
IGBT类型
沟渠现场停车
NTC热敏电阻
有
输入电容(Cies)@Vce
6.323 nF @ 20 V
产品
IGBT碳化硅模块
产品类别
IGBT模块
NXH300B100H4Q2F2PG拓展信息
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