ON Semiconductor 2N6035
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2N6035
1807-2N6035
晶体管 - 双极性晶体管(BJT)- 单个
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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2N6035详情
ON Semiconductor 2N6035重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Maximum Operating Supply Voltage
1.575 V
Minimum Operating Supply Voltage
1.14 V
Typical Operating Supply Voltage
1.2, 1.5 V
Package Description
FLANGE MOUNT, R-PSFM-T3
Package Style
FLANGE MOUNT
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Rohs Code
无
Transition Frequency-Nom (fT)
25 MHz
Manufacturer Part Number
2N6035
Package Shape
RECTANGULAR
Manufacturer
摩托罗拉半导体产品
Number of Elements
1
Part Life Cycle Code
Transferred
Ihs Manufacturer
MOTOROLA INC
Risk Rank
8.59
操作温度
0 to 70 °C
JESD-609代码
e0
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8541.29.00.95
子类别
其他晶体管
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
晶体管应用
AMPLIFIER
极性/通道类型
PNP
JEDEC-95代码
TO-225AA
速度等级
STD
最大耗散功率(Abs)
1.5 W
集电极电流-最大值(IC)
4 A
最小直流增益(hFE)
100
集电极-发射器电压-最大值
60 V
VCEsat-最大值
3 V
集电极-基极电容-最大值
200 pF
环境耗散-最大值
40 W
2N6035拓展信息
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