对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 晶体管元件材料 | 厂商 | Voltage - Gate Threshold (Vgs(th)) (Max) @ Id | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 额定电流 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 配置 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs(最大值) | 极性/通道类型 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 栅源电压 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | NTD4302 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | 4 | SILICON | 8.4A Ta 68A Tc | 4.5V 10V | 1 | 1.04W Ta 75W Tc | 40 ns | 3V @ 250μA | -55°C~150°C TJ | Tube | 2005 | e0 | yes | OBSOLETE (Last Updated: 1 week ago) | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn80Pb20) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 30V | 鸥翼 | 235 | 68A | 未说明 | R-PSSO-G2 | 不合格 | Single | 增强型MOSFET | 75W | DRAIN | N-Channel | SWITCHING | 10m Ω @ 20A, 10V | 2400pF @ 24V | 80nC @ 10V | ±20V | 68A | 20V | 0.01Ohm | 30V | 28A | 722 mJ | not_compliant | Non-RoHS Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | NTD4302G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | 4 | SILICON | 8.4A Ta 68A Tc | 4.5V 10V | 1 | 1.04W Ta 75W Tc | 40 ns | 3V @ 250μA | -55°C~150°C TJ | Tube | 2010 | e3 | yes | LAST SHIPMENTS (Last Updated: 1 week ago) | 1 (Unlimited) | 2 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 30V | 鸥翼 | 未说明 | 68A | 未说明 | R-PSSO-G2 | 不合格 | Single | 增强型MOSFET | 75W | DRAIN | N-Channel | SWITCHING | 10m Ω @ 20A, 10V | 2400pF @ 24V | 80nC @ 10V | ±20V | 68A | 1.9V | 20V | 30V | 28A | 722 mJ | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | NTD4302G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 8.4A Ta 68A Tc | 1.04W Ta 75W Tc | 4.5V 10V | 3V @ 250μA | -55°C~150°C TJ | Tube | Obsolete | 1 (Unlimited) | N-Channel | 10mOhm @ 20A, 10V | 2.4pF @ 24V | 80nC @ 10V | 30V | ±20V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD4302-001 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | 3 | SILICON | Obsolete | CASE 369D-01, DPAK-3 | IN-LINE | 未说明 | PLASTIC/EPOXY | CASE 369D-01 | 30 | onsemi | 无 | NTD4302-001 | RECTANGULAR | Rochester Electronics LLC | 1 | 活跃 | ROCHESTER ELECTRONICS LLC | 5.16 | 8.4 A | Bulk | NTD43 | - | e0 | 无 | 锡铅 | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | 240 | R-PSIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.01 Ω | 28 A | 30 V | 722 mJ | METAL-OXIDE SEMICONDUCTOR | unknown | |||||||||||||||||||||||||||||||||||||||||||||
NTD4302T4 | AMI Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 4.5V, 10V | 1.04W (Ta), 75W (Tc) | Contains lead / RoHS non-compliant | 8.4A (Ta), 68A (Tc) | NTD4302T4OS | 3V @ 250µA | -55°C ~ 150°C (TJ) | Tape & Reel (TR) | - | 1 (Unlimited) | MOSFET (Metal Oxide) | N-Channel | 10 mOhm @ 20A, 10V | 2400pF @ 24V | 80nC @ 10V | 30V | ±20V | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTD4302T4 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | 4 | SILICON | 8.4A Ta 68A Tc | 4.5V 10V | 1 | 1.04W Ta 75W Tc | 40 ns | 3V @ 250μA | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e0 | yes | OBSOLETE (Last Updated: 2 days ago) | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn80Pb20) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 30V | 鸥翼 | 240 | 68A | 30 | R-PSSO-G2 | 不合格 | Single | 增强型MOSFET | 75W | DRAIN | N-Channel | SWITCHING | 10m Ω @ 20A, 10V | 2400pF @ 24V | 80nC @ 10V | 15ns | ±20V | 68A | 20V | 0.01Ohm | 30V | 28A | 722 mJ | not_compliant | Non-RoHS Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
NTD4302-1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | TO-251-3 Short Leads, IPak, TO-251AA | NO | 4 | SILICON | 4.5V 10V | 8.4A Ta 68A Tc | 1 | 1.04W Ta 75W Tc | 40 ns | 3V @ 250μA | -55°C~150°C TJ | Tube | 2005 | e3 | yes | LAST SHIPMENTS (Last Updated: 6 days ago) | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 30V | 260 | 68A | 未说明 | R-PSIP-T3 | 不合格 | Single | 增强型MOSFET | 75W | DRAIN | N-Channel | SWITCHING | 10m Ω @ 20A, 10V | 2400pF @ 24V | 80nC @ 10V | ±20V | 68A | 20V | 0.01Ohm | 30V | 28A | 722 mJ | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | NTD4302-1G | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | TO-251-3 Short Leads, IPak, TO-251AA | NO | 3 | SILICON | 1 | 1.04W Ta 75W Tc | 8.4A Ta 68A Tc | 4.5V 10V | 3V @ 250μA | -55°C~150°C TJ | Tube | e3 | yes | Obsolete | 1 (Unlimited) | 3 | 哑光锡 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SINGLE | 260 | 未说明 | R-PSIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 10m Ω @ 20A, 10V | 2.4pF @ 24V | 80nC @ 10V | 30V | ±20V | 8.4A | 0.01Ohm | 28A | 30V | 722 mJ | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTD4302T4G | ON Semiconductor | 数据表 | 642 In Stock | - | 最小起订量: 1 最小包装量: 1 | 2 Weeks | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | YES | 4 | SILICON | 1 | 1.04W Ta 75W Tc | 40 ns | 8.4A Ta 68A Tc | 4.5V 10V | 3V @ 250μA | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | ACTIVE (Last Updated: 2 days ago) | 1 (Unlimited) | 2 | EAR99 | 7.8MOhm | Tin (Sn) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 30V | 鸥翼 | 260 | 68A | 40 | R-PSSO-G2 | Single | 增强型MOSFET | 75W | DRAIN | N-Channel | SWITCHING | 10m Ω @ 20A, 10V | 2400pF @ 24V | 80nC @ 10V | 15ns | ±20V | 18.5A | 1.9V | 20V | 30V | 28A | 722 mJ | 1.9 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
NTD4302-001 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 3 | SILICON | 1 | e0 | no | Obsolete | 1 (Unlimited) | 3 | 锡铅 | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | 240 | 30 | R-PSIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 8.4A | 0.01Ohm | 28A | 30V | 722 mJ | METAL-OXIDE SEMICONDUCTOR | Non-RoHS Compliant |
NTD4302
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302G
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Single
NTD4302-001
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302T4
AMI Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302T4
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302-1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302-1G
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Single
NTD4302T4G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Single
NTD4302-001
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Single


哦! 它是空的。