ON Semiconductor NXH35C120L2C2ESG

安装类型

通孔

包装/外壳

26-PowerDIP Module (1.199, 47.20mm)

供应商器件包装

26-DIP

ECCN (US)

EAR99

HTS

8541.29.00.95

Typical Collector Emitter Saturation Voltage (V)

1.8

Maximum Collector-Emitter Voltage (V)

1200

Maximum Power Dissipation (mW)

20(Typ)

Maximum Gate Emitter Voltage (V)

±20

Maximum Continuous Collector Current (A)

35

Maximum Gate Emitter Leakage Current (uA)

0.4

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Automotive

无

Supplier Package

DIP

Military

无

Mounting

通孔

Package Height

8

Package Length

73.2

Package Width

40.2

PCB changed

26

Collector-Emitter Saturation Voltage

1.8

Maximum Gate Emitter Voltage

±20.0V

Package Type

DIP26

Maximum Collector Emitter Voltage

650 V

Pd - Power Dissipation

-

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

6

Continuous Collector Current at 25 C

35 A

Manufacturer

onsemi

Brand

onsemi

RoHS

Details

Collector- Emitter Voltage VCEO Max

1200 V

Package

Tube

Current-Collector (Ic) (Max)

35 A

Base Product Number

NXH35

厂商

onsemi

Product Status

活跃

包装

Tube

操作温度

-40°C ~ 150°C (TJ)

系列

-

零件状态

活跃

子类别

IGBTs

引脚数量

26

配置

Hex

功率耗散

-

功率 - 最大

20 mW

输入

三相桥式整流器

产品类别

IGBT模块

最大集极截止电流

250 µA

电压 - 集射极击穿（最大值）

1200 V

信道型

N

不同 Vge、Ic 时 Vce(on)（最大值）

2.4V @ 15V, 35A

连续集电极电流

35

IGBT类型

-

NTC热敏电阻

有

输入电容(Cies)@Vce

8.333 nF @ 20 V

产品

IGBT硅模块

产品类别

IGBT模块

RoHS状态

符合RoHS标准