ON Semiconductor SNXH160T120L2Q1PG
- 收藏
- 对比
SNXH160T120L2Q1PG
1807-SNXH160T120L2Q1PG
晶体管 - IGBT - 模块
--
大陆
立即发货

Trans IGBT Module N-CH 1200V 140A 280000mW 30-Pin PIM Tray
1最小包装量--
SNXH160T120L2Q1PG详情
ON Semiconductor SNXH160T120L2Q1PG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
2.06
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
280000
Maximum Continuous Collector Current (A)
140
Maximum Gate Emitter Leakage Current (uA)
0.8
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Automotive
无
Supplier Package
PIM
Military
无
Mounting
Screw
Package Height
12.1(Max)
Package Length
83(Max)
Package Width
37.9(Max)
PCB changed
30
零件状态
Unconfirmed
引脚数量
30
配置
Quad
信道型
N
SNXH160T120L2Q1PG拓展信息
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
onsemi







哦! 它是空的。