Qorvo UF3C065030B3

包装/外壳

D2PAK-3

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

242 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 25 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

51 nC

Rds On - Drain-Source Resistance

27 mOhms

Id - Continuous Drain Current

65 A

系列

UF3C

技术

SiC

通道数量

1 Channel