Qorvo UF3C170400B7S

包装/外壳

D2PAK-7L

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

100 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

23.1 nC

Rds On - Drain-Source Resistance

400 mOhms

Id - Continuous Drain Current

7.6 A

技术

SiC

通道数量

1 Channel