Qorvo UF3C120080K4S

包装/外壳

TO-247-4

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

51 nC

Rds On - Drain-Source Resistance

100 mOhms

Id - Continuous Drain Current

33 A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

254.2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

技术

SiC

通道数量

1 Channel