Qorvo UJ4SC075005L8S

包装/外壳

MO-229-8

Vds - Drain-Source Breakdown Voltage

750 V

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

1.153 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

164 nC

Rds On - Drain-Source Resistance

5 mOhms

Id - Continuous Drain Current

120 A

技术

SiC

通道数量

1 Channel