Qorvo UF3SC065007K4S

包装/外壳

TO-247-4

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

789 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

214 nC

Rds On - Drain-Source Resistance

9 mOhms

Id - Continuous Drain Current

120 A

系列

UF3SC

技术

SiC

通道数量

1 Channel