Qorvo UF4SC120030K4S

包装/外壳

TO-247-4

Id - Continuous Drain Current

53 A

Rds On - Drain-Source Resistance

39 mOhms

Qg - Gate Charge

37.8 nC

Channel Mode

Depletion

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

341 W

Vgs th - Gate-Source Threshold Voltage

6 V

Vds - Drain-Source Breakdown Voltage

1.2 kV

技术

SiC

通道数量

1 Channel