Samsung Electronics M470T6464EHS-CE7
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M470T6464EHS-CE7
2107-M470T6464EHS-CE7
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DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM
1最小包装量--
M470T6464EHS-CE7详情
Samsung Electronics M470T6464EHS-CE7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
PCB changed
200
Lead Shape
No Lead
Minimum Operating Supply Voltage (V)
1.7
Chip Package Type
FBGA
Chip Configuration
64Mx16
Maximum Clock Rate (MHz)
800
Max. Access Time (ns)
0.4
Data Bus Width (bit)
64
Chip Density (bit)
1G
Number of Chip per Module
4
Module Density
512Mbyte
Module
DRAM模块
ECCN (US)
4A994.a
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
480
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Module Sides
Single
ECC Support
无
Number of Ranks
Single
Number of Chip Banks
8
CAS Latency
5
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
USODIMM
Mounting
Socket
Package Height
30
Package Length
67.6
Package Width
3.8(Max)
零件状态
Obsolete
引脚数量
200
组织结构
64Mx64
锁相环
无
自我刷新
有
模块类型
200SODIMM
RoHS状态
符合RoHS标准
M470T6464EHS-CE7拓展信息
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