Samsung Semiconductor K8P6415UQB-DI4BT

EU RoHS

Compliant

ECCN (US)

3A991.b.1.a

Automotive

无

PPAP

无

Cell Type

NOR

Chip Density (bit)

64M

Block Organization

Asymmetrical

Location of Boot Block

Bottom|Top

Address Bus Width (bit)

22

Bank Size

8/8/24/24Mb

Number of Bits/Word (bit)

16

Number of Words

4M

Programmability

有

Timing Type

Asynchronous

Max. Access Time (ns)

60

Maximum Erase Time (S)

113.6/Chip

Maximum Page Access Time (ns)

25

Maximum Programming Time (ms)

50400/Chip

OE Access Time (ns)

25

Process Technology

CMOS

Interface Type

Parallel

Minimum Operating Supply Voltage (V)

2.7

Typical Operating Supply Voltage (V)

3

Maximum Operating Supply Voltage (V)

3.6

Programming Voltage (V)

2.7 to 3.6

Operating Current (mA)

55

Page Read Current (mA)

15

Program Current (mA)

30

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

85

Supplier Temperature Grade

Industrial

Command Compatible

无

ECC Support

无

Support of Page Mode

有

Mounting

表面贴装

Package Height

0.58

Package Width

6

Package Length

8

PCB changed

48

Standard Package Name

BGA

Supplier Package

FBGA

Lead Shape

Ball

包装

卷带

零件状态

Obsolete

引脚数量

48

建筑学

Sectored

行业规模

8Kbyte x 16|64Kbyte x 126

页面尺寸

8Words

引导模块

有

库存数量

4