参数名
参数值
参数名
参数值
包装/外壳
TO-39-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
5.5 A
Rds On - Drain-Source Resistance
400 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
-
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
25 W
Channel Mode
Enhancement
Fall Time
30 ns
Factory Pack QuantityFactory Pack Quantity
30
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
0.039133 oz
配置
Single
通道数量
1 Channel
上升时间
42 ns
晶体管类型
1 N-Channel