STMicroelectronics RF5L08350CB4

包装/外壳

B4E

安装类型

表面贴装

供应商器件包装

B4E

厂商

STMicroelectronics

Product Status

活跃

Voltage Rated

110 V

Package Type

B4E

Vds - Drain-Source Breakdown Voltage

110 V

Vgs th - Gate-Source Threshold Voltage

3 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

10 V

Unit Weight

0.141096 oz

Factory Pack QuantityFactory Pack Quantity

120

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Rds On - Drain-Source Resistance

1 Ohms

RoHS

Details

Minimum Operating Temperature

-

Id - Continuous Drain Current

2.5 A

系列

-

包装

MouseReel

类型

射频功率MOSFET

子类别

MOSFETs

额定电流

1μA

技术

Si

频率

1GHz

引脚数量

5

工作频率

1 GHz

通道数量

1 Channel

输出功率

400 W

测试电流

200 mA

产品类别

射频MOSFET晶体管

晶体管类型

LDMOS

增益

19dB

功率 - 输出

400W

噪声图

-

电压-测试

50 V

产品类别

射频MOSFET晶体管