STMicroelectronics SCTWA60N12G2-4AG
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SCTWA60N12G2-4AG
2381-SCTWA60N12G2-4AG
晶体管 - 特殊用途
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Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
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SCTWA60N12G2-4AG详情
STMicroelectronics SCTWA60N12G2-4AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Contact plating
gold-plated
Number of pins
98
终端数量
4
晶体管元件材料
碳化硅
外壳材料
1
Part Life Cycle Code
活跃
Drain Current-Max (ID)
52 A
Operating Temperature-Max
200 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x49
Row pitch
2.54mm
Gross weight
3.43 g
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
Current rating
1.5A
参考标准
AEC-Q101
JESD-30代码
R-PSFM-T4
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.058 Ω
脉冲漏极电流-最大值(IDM)
156 A
DS 击穿电压-最小值
1200 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
388 W
Rated voltage
60V
反馈上限-最大值 (Crss)
18 pF
个人资料
beryllium copper
Plating thickness
0.254µm
Flammability rating
UL94V-0
SCTWA60N12G2-4AG拓展信息
Thomson-CSF Compsants Specific
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