STMicroelectronics STG8M120F3D7
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STG8M120F3D7
2381-STG8M120F3D7
晶体管 - 特殊用途
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大陆
立即发货

Trench gate field-stop low-loss M series IGBT die, 1200V, 8A
1最小包装量--
STG8M120F3D7详情
STMicroelectronics STG8M120F3D7重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
生命周期状态
Production (Last Updated: 3 years ago)
Collector Base Breakdown Voltage (VCES)
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
RoHS
Compliant
最大集电极电流
8 A
STG8M120F3D7拓展信息
Thomson-CSF Compsants Specific
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哦! 它是空的。