SUMITOMO ELECTRIC Device Innovations Inc FLM3439-4F
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FLM3439-4F
2388-FLM3439-4F
晶体管 - 特殊用途
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Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
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FLM3439-4F详情
技术文档: SUMITOMO ELECTRIC Device Innovations Inc FLM3439-4F.
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FLM3439-4F拓展信息
EGN28B200IV-R
SUMITOMO ELECTRIC Device Innovations Inc
EGNB090MK
SUMITOMO ELECTRIC Industries Ltd
SGK5867-60A
SUMITOMO ELECTRIC Industries Ltd
EGN29B100IV-R
SUMITOMO ELECTRIC Device Innovations Inc
SGN19C210I2D
SUMITOMO ELECTRIC Industries Ltd
SGN21C105MK
SUMITOMO ELECTRIC Industries Ltd
SGFCF10S-DT1
SUMITOMO ELECTRIC Industries Ltd
FLM4450-18F
SUMITOMO ELECTRIC Device Innovations Inc
FSX017LG
SUMITOMO ELECTRIC Device Innovations Inc
FLL177ME
SUMITOMO ELECTRIC Device Innovations Inc







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