Taiwan Semiconductor TSM5055DCR RLG

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-PDFN (5x6)

Typical Turn-Off Delay Time

8.2 ns, 34 ns

Typical Turn-On Delay Time

4.8 ns, 11 ns

Part # Aliases

TSM5055DCR

Factory Pack QuantityFactory Pack Quantity

2500

Moisture Sensitive

有

Forward Transconductance - Min

27 S, 47 S

Fall Time

14 ns, 49 ns

Channel Mode

Enhancement

Pd - Power Dissipation

30 W, 69 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

9.3 nC, 49 nC

Vgs th - Gate-Source Threshold Voltage

1.2 V

Vgs - Gate-Source Voltage

- 20 V, - 20 V, + 20 V, + 20 V

Rds On - Drain-Source Resistance

8.8 mOhms, 2.7 mOhms

Id - Continuous Drain Current

38 A, 107 A

Vds - Drain-Source Breakdown Voltage

30 V

Transistor Polarity

N-Channel

RoHS

Details

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

TSM5055

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)

厂商

Taiwan Semiconductor Corporation

Product Status

活跃

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

系列

-

配置

Dual

通道数量

2 Channel

功率 - 最大

2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)

Rds On(Max)@Id,Vgs

11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

555pF @ 15V, 2550pF @ 15V

门极电荷(Qg)(最大)@Vgs

9.3nC @ 10V, 49nC @ 10V

上升时间

65 ns, 79 ns

漏源电压 (Vdss)

30V

晶体管类型

Asymmetric Dual N-Channel Power MOSFET

场效应管特性

-