Taiwan Semiconductor TSM60N900CI

包装/外壳

TO-220-3

RoHS

Compliant

Manufacturer

TAIWAN SEMICONDUCTOR

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

20 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

TSM60N900CI C0G

Brand

台湾半导体

Qg - Gate Charge

9.7 nC

Rds On - Drain-Source Resistance

720 mOhms

Typical Turn-Off Delay Time

22 ns

Id - Continuous Drain Current

4.5 A

包装

Bulk

电容量

Ciss - 480pF

子类别

MOSFETs

技术

Si

频率

20 MHz

配置

Single

通道数量

1 Channel

电压

VDS - 600V

内存大小

2 kB

访问时间

20 µs

上升时间

16 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

无铅

含铅