Taiwan Semiconductor TSM70N1R4CP

包装/外壳

TO-252-3

Vds - Drain-Source Breakdown Voltage

700 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

38 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

TSM70N1R4CP ROG

Manufacturer

台湾半导体

Brand

台湾半导体

Qg - Gate Charge

7.7 nC

Rds On - Drain-Source Resistance

900 mOhms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

3.3 A

包装

MouseReel

电容量

Ciss - 370pF

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

电压

VDS - 700V

上升时间

22 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET