Toshiba 2SA1941-O(Q)

安装类型

通孔

表面安装

NO

Emitter-Base Voltage

5(V)

Collector Current (DC) (Max)

10 A

Operating Temperature Classification

Military

Package Type

TO-3PN

Transistor Polarity

PNP

Collector-Base Voltage

140(V)

Category

双极电源

Operating Temp Range

-55C to 150C

Collector Current (DC)

10(A)

Number of Elements

1

Rad Hardened

无

Collector-Emitter Voltage

140(V)

DC Current Gain

80

Mounting

通孔

Number of Elements per Chip

1

Dimensions

19 x 15.9 x 4.8mm

Maximum Operating Temperature

+150 °C

Maximum Collector Emitter Voltage

140 V

Maximum DC Collector Current

10 A

Maximum Operating Frequency

30 MHz

Minimum DC Current Gain

55

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

100 W

DC Collector/Base Gain hfe Min

35

Collector-Emitter Saturation Voltage

800 mV

Unit Weight

0.165788 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

通孔

Gain Bandwidth Product fT

30 MHz

Manufacturer

Toshiba

Brand

Toshiba

DC Current Gain hFE Max

83

RoHS

Details

Collector- Emitter Voltage VCEO Max

140 V

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

2SA1941-O(Q)

Part Life Cycle Code

活跃

Samacsys Description

Tr.,PNP,140V/10A,hfe=80to160,TO-3P(N)

Ihs Manufacturer

TOSHIBA CORP

Risk Rank

1.55

ECCN 代码

EAR99

子类别

Transistors

技术

Si

Reach合规守则

unknown

频率

30(MHz)

引脚数量

3 +Tab

配置

Single

功率耗散

100(W)

输出功率

Not Required(W)

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

晶体管类型

PNP

集电极基极电压(VCBO)

140 V

最大耗散功率(Abs)

100 W

集电极电流-最大值(IC)

10 A

最小直流增益（hFE）

80

连续集电极电流

10 A

产品类别

Bipolar Transistors - BJT