Toshiba 2SC2713-BL(TE85L,F

包装/外壳

SOT-346-3

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Emitter-Base Voltage

5(V)

Collector Current (DC) (Max)

0.1 A

Operating Temperature Classification

Military

Package Type

SMini

Transistor Polarity

NPN

Collector-Base Voltage

120(V)

Category

双极小信号

Operating Temp Range

-55C to 125C

Collector Current (DC)

0.1(A)

Number of Elements

1

Rad Hardened

无

Collector-Emitter Voltage

120(V)

DC Current Gain

350

Mounting

表面贴装

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

150 mW

DC Collector/Base Gain hfe Min

200

Collector-Emitter Saturation Voltage

300 mV

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Manufacturer

Toshiba

Brand

Toshiba

Maximum DC Collector Current

100 mA

DC Current Gain hFE Max

700

RoHS

Details

Collector- Emitter Voltage VCEO Max

120 V

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

125 °C

Transition Frequency-Nom (fT)

100 MHz

Manufacturer Part Number

2SC2713BL(TE85L,F

Package Shape

RECTANGULAR

Part Life Cycle Code

活跃

Ihs Manufacturer

TOSHIBA CORP

Risk Rank

5.67

包装

卷带

系列

2SC2713

附加功能

低噪音

子类别

Transistors

技术

Si

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

unknown

频率

100(MHz)

引脚数量

3

JESD-30代码

R-PDSO-G3

配置

Single

功率耗散

0.15(W)

输出功率

Not Required(W)

晶体管应用

AMPLIFIER

极性/通道类型

NPN

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

120 V

最大耗散功率(Abs)

0.15 W

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

350

连续集电极电流

100 mA

集电极-发射器电压-最大值

120 V

VCEsat-最大值

0.3 V

环境耗散-最大值

0.15 W

产品类别

Bipolar Transistors - BJT