TT Electronics BCY71-QR-B

包装/外壳

TO-18-3

Collector- Emitter Voltage VCEO Max

45 V

Collector-Emitter Saturation Voltage

1.2 V

DC Collector/Base Gain hfe Min

100 at - 10 mA, 1 V

Emitter- Base Voltage VEBO

5 V

Gain Bandwidth Product fT

200 MHz

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Pd - Power Dissipation

350 mW

Transistor Polarity

PNP

技术

Si

配置

Single

集电极基极电压(VCBO)

45 V