TT Electronics / Semelab D1005UK

包装/外壳

DM

材料

Si

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

70

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

20

Typical Input Capacitance @ Vds (pF)

240(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

10(Max)@28V

Typical Output Capacitance @ Vds (pF)

100(Max)@28V

Typical Forward Transconductance (S)

3.2(Min)

Maximum Power Dissipation (mW)

146000

Output Power (W)

80

Typical Power Gain (dB)

16(Min)

Maximum Frequency (MHz)

175

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

数据总线终端

Military

无

Mounting

Screw

Package Height

6.6

Package Length

24.76

Package Width

12.7

PCB changed

4

Vds - Drain-Source Breakdown Voltage

70 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

20 A

零件状态

活跃

技术

Si

引脚数量

4

工作频率

175 MHz

配置

单双源

输出功率

80 W

增益

16 dB

信道型

N

RoHS状态

符合RoHS标准