TT Electronics / Semelab D1011UK

包装/外壳

SOIC-8

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

70

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

5

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1000

Typical Input Capacitance @ Vds (pF)

60(Max)@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

2.5(Max)@28V

Typical Output Capacitance @ Vds (pF)

30(Max)@28V

Typical Forward Transconductance (S)

0.8(Min)

Maximum Power Dissipation (mW)

30000

Output Power (W)

10

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

SOP

Supplier Package

SO

Military

无

Mounting

表面贴装

Package Height

2.18

Package Length

5.08

Package Width

4.06

PCB changed

8

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

70 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

5 A

零件状态

活跃

技术

Si

引脚数量

8

工作频率

500 MHz

配置

双四源

输出功率

10 W

增益

13 dB

信道型

N

RoHS状态

符合RoHS标准