TT Electronics / Semelab D1201UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1000

Typical Input Capacitance @ Vds (pF)

60(Max)@20V

Typical Reverse Transfer Capacitance @ Vds (pF)

4(Max)@12.5V

Typical Output Capacitance @ Vds (pF)

40(Max)@12.5V

Typical Forward Transconductance (S)

0.8(Min)

Maximum Power Dissipation (mW)

50000

Output Power (W)

10

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

500

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

Module

Supplier Package

DP 外壳

Military

无

Mounting

Screw

Package Height

5.08

Package Length

18.92

Package Width

6.35

PCB changed

3

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

RoHS状态

符合RoHS标准