VISHAY SI3590DV-T1-E3

Type of transistor

N/P-MOSFET

Polarisation

unipolar

Drain-source voltage

30/-30V

Drain current

3/-2A

Pulsed drain current

8A

Case

TSOP6

Gate-source voltage

±12V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

0.1g

Certificates

RoHS compliant

Power dissipation

1.05W

Gate charge

6/4.5nC

On-state resistance

300/120mΩ