VISHAY SI3590DV-T1-GE3

Type of transistor

N/P-MOSFET

Polarisation

unipolar

Drain-source voltage

30/-30V

Drain current

2/-1.3A

Pulsed drain current

8A

Case

TSOP6

Gate-source voltage

±12V

Mounting

SMD

Kind of package1

tape

Kind of package

reel

Kind of channel

enhanced

Gross weight

0.1g

Certificates

RoHS compliant

Power dissipation

0.53W

Gate charge

4.5/6nC

On-state resistance

77/170mΩ