Vishay SI4599DY

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

6.8@N Channel|5.8@P Channel

Maximum Drain Source Resistance (MOhm)

35.5@10V@N Channel|45@10V@P Channel

Typical Gate Charge @ Vgs (nC)

11.7@10V|[email protected]@N Channel|25@10V|[email protected]@P Channel

Typical Gate Charge @ 10V (nC)

11.7@N Channel|25@P Channel

Typical Input Capacitance @ Vds (pF)

640@20V@N Channel|970@20V@P Channel

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

9|10@N Channel|13@P Channel

Typical Rise Time (ns)

10|17@N Channel|12|33@P Channel

Typical Turn-Off Delay Time (ns)

15|16@N Channel|30|28@P Channel

Typical Turn-On Delay Time (ns)

7|16@N Channel|44@P Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.55(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

N|P