Vishay SI4621DY-T1-GE3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

3

Maximum Continuous Drain Current (A)

5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

54@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|8.7@10V

Typical Gate Charge @ 10V (nC)

8.7

Typical Input Capacitance @ Vds (pF)

450@10V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

22

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.55(Max)

Package Width

4(Max)

Package Length

5(Max)

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

单排双泄

信道型

P