Vishay SQJQ936EL-T1_GE3

安装类型

表面贴装

包装/外壳

PowerPAK® 8 x 8 Dual

供应商器件包装

PowerPAK® 8 x 8 Dual

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SQJQ936

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

厂商

Vishay Siliconix

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

75 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

98 nC

Rds On - Drain-Source Resistance

2.3 mOhms

Id - Continuous Drain Current

100 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101, TrenchFET®

技术

MOSFET (Metal Oxide)

配置

2 N-Channel

通道数量

2 Channel

功率 - 最大

75W (Tc)

Rds On(Max)@Id,Vgs

2.3mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

7300pF @ 25V

门极电荷(Qg)(最大)@Vgs

45nC @ 10V

漏源电压 (Vdss)

40V

场效应管特性

Standard