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价格梯度
内地含税价
1
¥5.528256
10
¥5.215335
100
¥4.92013
500
¥4.641627
1000
¥4.378895
SIA519EDJ-T1-GE3详情
VISHAY SIA519EDJ-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N/P-MOSFET
Polarisation
unipolar
Drain-source voltage
20/-20V
Drain current
4.5/-4.5A
Gate-source voltage
±12V
Mounting
SMD
Kind of package
reel,
Kind of channel
enhanced
Gross weight
0.1 g
Power dissipation
7.8W
Gate charge
16/12nC
On-state resistance
137/65mΩ
SIA519EDJ-T1-GE3拓展信息
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哦! 它是空的。